(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

(Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced the adoption of both technologies into Dell’s ...

Detailed price information for Navitas Semiconductor Corp (NVTS-Q) from The Globe and Mail including charting and trades.

The hybrid integration of GaN and silicon paves the way for high-efficiency, cost-effective 5G and millimetre-wave RF systems that provide a cutting-edge power density and scalability.

One of the firm's ETFs with the investment theme of next-generation internet outperformed broad-based global equity indices ...

China’s space programme is a step closer to securing more efficient and lightweight energy supplies after extensive testing of a new power switch and converter device built with third-generation ...

It is possible to generate light in semiconductor materials (such as GaN or AlInGaP ... bandgap structure and allowing for efficient light generation. Figure 1: White light from a cone-shaped ...