That's the kind of technology that researchers at Kyoto University have developed for the band gap of semiconductor materials. The work is published in the journal Computational Materials Science.

Techniques for Band Gap Engineering vary, including doping, the introduction of impurities into a semiconductor to alter its electrical properties; strain engineering, where stress is applied to ...

Silicon carbide (SiC) semiconductors are just such a technology, and have already begun to revolutionise the industry. A graph showing the relationship between band gap and temperature for various ...

Topological materials are revolutionizing semiconductor manufacturing, offering enhanced conductivity and efficiency for next ...

It is predicted to be a semiconductor with a band gap appropriate for electronic devices, ultra-high charge carrier mobility far surpassing that of silicon, and ultimate strength comparable to ...

1) Wide Band Gap power semiconductor: Power semiconductors composed of compound elements of two or more types, rather than single materials like silicon (Si). Silicon carbide (SiC) and gallium ...

Predicting band gap with neural networks Researchers from Kyoto University developed a machine learning model to predict the band gap of novel semiconductor materials. Using data from almost 2,000 ...

Researchers have revealed new insights into rhombohedral stacking in graphene, reporting on how it behaves as a semiconductor ...

New research from materials scientist Chris Van de Walle illuminates the path to superior electro-optic performance in aluminum scandium nitride alloys ...

Scientists are investigating how structures made from several layers of graphene stack up in terms of their fundamental physics and their potential as reconfigurable semiconductors for advanced ...