Abstract: In this work, we systematically explore the static and dynamic performance of silicon nanosheet (NSH)-based complementary metal–oxide–semiconductor (CMOS) inverters, including complementary ...

A new technical paper titled “Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)” was published by researchers at National Yang Ming Chiao Tung University. “This work ...

Results show a suppressed improvement with MFMIS topology over the MFIS topology in the subthreshold region if implemented with the CFET architecture due to the CFET-specific common-gate structure. We ...

SRAM substitute; 3D photonic integration; 3DIC partitioning; CFETs design; EFO errors in wirebonding packaging process; 6G survey; multi-party comp ...

IMEC于2018年提出了堆叠互补晶体管的微缩版CFET技术，英特尔和台积电也都进行了跟进。在2023年的IEEE国际电子器件会议上，英特尔展示了其在3D堆叠CMOS晶体管方面取得的突破，研究人员通过将3D堆叠CMOS晶体管与背面供电和背面接触相结合，实现了业界首次在缩小 ...

Javier Elizalde, Chief Operations Officer at Wooptix, discusses the company’s recent €10 million Series C funding round, which allows it to push the boundaries in resolution quality within the ...

尽管摩尔定律的增速已显著放缓，但工艺节点依然稳步向前，现已演进至2nm甚至1nm以下。而在最新的逻辑节点中，传统器件架构已不具优势，而互补场效应晶体管(CFET)则被看做“成大事者”，成为埃米时代（1埃米等于0.1纳米）的主流架构 凭借其创新数据中心 ...

基金业绩表现，即风险调整后收益。评级不包含业绩不满两年的基金，以及封闭式基金、货币市场基金和保本基金。 平安基金管理有限公司关于旗下 ...