A world-first N-polar GaN wafer created by Chinese scientists is set to be a game changer for the semiconductor industry.

GaN is a third-generation semiconductor material commonly used in 5G base stations, radar, military communications, aerospace, and electronic warfare. It is better than silicon in specific ...

capable of integrating other III–V semiconductors, thus broadening potential applications beyond GaN. Possible future applications include advanced silicon photonics—optical communication systems ...

(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

Navitas Semiconductor will showcase GaN and ... Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high ...

The foundry’s innovative and highly efficient production process significantly reduces the carbon footprint of semiconductor fabrication. It also boasts cycle times of just days, taking designs from ...

ROHM is also expanding into new product areas such as the mass production of GaN (gallium nitride), which, like SiC, is attracting attention as a next-generation semiconductor to meet growing market ...

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