A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...

Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials Bio-Engineering Research Centre (AMBER), Trinity College Dublin, Dublin 2, Ireland ...

Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science (HFIPS), Chinese Academy of Sciences, Hefei, Anhui 230031, China ...

For example, Samsung is shipping various processes based on finFETs at 7nm and 5nm, with plans to introduce nanosheets at 3nm in 2022/2023. Meanwhile, TSMC will extend the finFET to 3nm, but will ...