Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Murata’s digital envelope tracking technology enhances the power efficiency of RF circuits for 5G and 6G devices.

The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum ...

Spectrum Devices Corporation announced the release of their HF50-200 RF Power transistor designed for the 50V, 2-30 MHz RF Communications, RF Power Supply and RF Generator markets. Operating at 30 MHz ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five ...

XP Power (LON:XPP – Free Report) had its target price trimmed by Deutsche Bank Aktiengesellschaft from GBX 1,325 ($17.13) to GBX 990 ($12.80) in a report published on Friday morning, MarketBeat ...

Rohm has announced that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies ...

Power transmission operator National Grid Corporation of the Philippines (NGCP) on Wednesday said it is preparing ...

Open Cosmos and i2CAT have announced the launch of Europe’s first Low Earth Orbit (LEO) lab for R&D in non-terrestrial networks (NTN), The mission involves the 6GStarLab, a satellite designed to ...

With a ₹450 crore Vande Bharat deal and a ₹7,600 crore semiconductor push, CG Power is betting big on India’s industrial ...