Achieving integration of semiconducting and superconducting qubits with full industrial 300-mm wafer fabrication.

Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.

CP是理解栅叠加行为的一种有用技术，随着高κ薄膜越来越常用于晶体管栅而变得越来越重要。CP表征了界面和电荷捕获现象。CP结果的变化可用于确定典型的可靠性测试方法所引起的退化量，采用直流或脉冲应力：热载流子注入（HCI）、负偏置温度不稳定性（NBTI）和随时间变化的介电击穿（TDDB）。

D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.