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Compoundsemiconductor.net
11 小时
SiC MOSFETs: Understanding the benefits of plasma nitridation
The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2 ...
Compoundsemiconductor.net
11 小时
Wolfspeed reports Q2 results
Wolfspeed has announced results for the second quarter of fiscal 2025. Highlights include consolidated revenue of $181m ...
Compoundsemiconductor.net
11 小时
VueReal secures $40.5m to scale MicroSolid printing
VueReal, the Canada-based developer of MicroSolid Printing technology, has secured access to $40.5 million in Series C ...
Compoundsemiconductor.net
4 天
Mitsubishi joins Horizon Europe's FLAGCHIP project
Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...
Compoundsemiconductor.net
4 天
Vishay launches new high voltage SiC diodes
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
Compoundsemiconductor.net
4 天
UK team leads diamond-FET breakthrough
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
Compoundsemiconductor.net
4 天
GaN adoption at tipping point, says Infineon
While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption ...
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